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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
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2SK2570
Silicon N-Channel MOS FET Low Frequency Power Switching
ADE-208-574 (Z) 1st. Edition Aug. 1997 Features
* Low on-resistance R DS(on) = 0. 8 typ. (VGS = 4 V, I D = 100 mA) * 2.5V gate drive devices. * Small package (MPAK)
Outline
MPAK
3 1 2
D
G
1. Source 2. Gate 3. Drain
S
2SK2570
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg
1
Ratings 20 10 0.2 0.4 150 150 -55 to +150
Unit V V A A mW C C
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 20 10 -- -- 0.5 -- Typ -- -- -- -- -- 0.8 Max -- -- 1.0 5.0 1.5 1.1 Unit V V A A V S Test Conditions I D = 10A, VGS = 0 I G = 100A, VDS = 0 VDS = 20 V, VGS = 0 VGS = 6.5V, VDS = 0 I D = 10A, VDS = 5V I D = 100 mA VGS = 4V *1 -- 1.3 2.2 I D = 40 mA VGS = 2.5V *1 Forward transfer admittance |yfs| Ciss Coss 0.22 0.35 -- I D = 100 mA VDS = 10V *1 Input capacitance Output capacitance -- -- -- -- -- -- -- 45 33 9.6 20 60 240 140 -- -- -- -- -- -- -- pF pF pF ns ns ns ns VDS = 10V VGS = 0 f = 1MHz VGS = 5V, ID = 100 mA RL = 100
Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance
Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Notes: 1. Pulse test 2. Marking is "ZL-" t d(on) tr t d(off) tf
2SK2570
Main Characteristics
Power vs. Temperature Derating 200 Pch (mW) I D (A) 5 2 1 1 ms PW 10 = 0.2 (1 DC sh ms ot 0.1 O ) pe Operation in ra tio 0.05 this area is n limited by R DS(on) 0.02 Ta = 25 C 0.01 1 shot 0.05 0.2 0.5 1 2 5 10 20 50 100 Drain to Source Voltage V DS (V) 0.5 Maximum Safe Operation Area
150
Channel Dissipation
100
50
0
50
100
150
200
Ambient Temperature
Ta (C)
Drain Current
Typical Output Characteristics 0.20 10 V 5V 2.5 V 2V I D (A) 0.16 0.20
Typical Transfer Characteristics
I D (A)
0.16
75C 0.12 25C Tc = -25C
0.12 1.8 V 0.08 VGS = 1.6 V Pulse Test 0 2 4 6 Drain to Source Voltage 8 10 V DS (V)
Drain Current
Drain Current
0.08
0.04
0.04 V DS = 10 V Pulse Test 0 0.5 1.0 1.5 Gate to Source Voltage 2.0 2.5 V GS (V)
2SK2570
Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 0.5 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 VGS = 2.5 V 1 4V 0.5
0.4
0.3
0.2 I D = 0.2 A 0.1 0.1 A 0.05 A 6 2 4 Gate to Source Voltage 8 V GS (V) 10
0.2 0.1 0.01
0
0.02 0.05 0.1 0.2 Drain Current I D (A)
0.5
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance vs. Temperature 2.5 I D = 0.2 A
Forward Transfer Admittance vs. Drain Current
1 0.5 0.2 0.1 0.05
2.0
Tc = -25 C 25 C 75 C
1.5
VGS = 2.5 V
0.05, 0.1A
1.0 0.05, 0.1, 0.2 A 0.5 0 -40 4V Pulse Test 0 40 80 120 160 Case Temperature Tc (C)
0.02 0.01
0.005
V DS = 10 V Pulse Test 0.005 0.01 0.02 0.05 0.1 Drain Current I D (A) 0.2
0.002
2SK2570
Typical Capacitance vs. Drain to Source Voltage 500 200 Capacitance C (pF) Switching Time t (ns) 100 50 20 10 5 2 1 0 VGS = 0 f = 1 MHz 4 8 12 16 20 Crss Ciss Coss 500 t d(off) 200 100 50 20 10 5 0.05 t d(on) tf tr Switching Characteristics
V GS = 5 V, V DD = 10 V PW = 5 s, duty < 1 % 0.1 0.2 Drain Current I D (A) 0.5
Drain to Source Voltage V DS (V)
Reverse Drain Current vs. Source to Drain Voltage 0.20 Reverse Drain Current I DR (A)
0.16
0.12
5V
V GS = 0
0.08
0.04 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V)
2SK2570
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 5V 50 V DD = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform
90%
2SK2570
Package Dimensions As of January, 2001
Unit: mm
0.65
0.10 0.4 + 0.05 -
0.16 - 0.06
+ 0.10
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
0.95
0.95
1.9 0.2 2.95 0.2
0.3
+ 0.2 1.1 - 0.1
0.65
2.8
Hitachi Code JEDEC EIAJ Mass (reference value)
MPAK -- Conforms 0.011 g
2SK2570
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm
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For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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